barrier height
英 [ˈbæriə(r) haɪt]
美 [ˈbæriər haɪt]
势垒高度
双语例句
- Vary temperature, barrier height, and potential energies.
不同的温度、势垒高度和潜能。 - Influence of barrier height of the front contact on the amorphous silicon and microcrystalline silicon heterojunction solar cells
前端接触势垒高度对非晶硅和微晶硅异质结太阳电池的影响 - The ground state Fermi level of the intrinsic semiconductor which can be used to determine the barrier height is different from the intrinsic Fermi level in semiconductor physics.
文中用于确定接触势垒高度的“本征半导体基态费米能级ESF，i”不同于半导体物理中所指的“本征费米能级Ei”。 - The relationship between transmission coefficient and effective barrier height increasing is also discussed.
文中讨论了透射系数与有效势垒高度提高的关系。 - Interference method is introduced to analyze the process of electron tunneling potential barrier. With this method, the relation between the applied voltage, oxide thickness, barrier height and effective electron mass can be obtained very conveniently.
利用波的干涉方法来处理电子隧穿势垒的过程，方便地获得了出现极值时外加电压和栅氧化层厚度、势垒高度、电子的有效质量之间的关系。 - A computer regression analysis is made of the forward characteristics of the Schottky barrier diodes. Useful information and data including barrier height and series resistance were obtained, which can help improve the quality of the diodes.
用肖特基整流二极管势垒正向特性计算机回归分析法，可得到势垒高度、二极管串联电阻和理想因子等各种信息和有用数据，给肖特基二极管质量改进提供依据。 - Electrons with energy lower than the barrier height can still go through the barrier by tunneling.
当一个电子的能量低于势垒高度时，它仍可以隧穿通过势垒。 - The cutoff wavelength and the quantum efficiency of PtSi infrared detector are restricted by its Schottky barrier height.
PtSi肖特基二极管的势垒高度制约PtSi红外探测器的截止波长和量子效率。 - When samples annealed in air atmosphere, donor concentration and barrier height drops while donor concentration remains unchanged;
在空气中退火，样品的施主浓度减少，势垒高度降低；在Ar气中退火样品的施主浓度基本保持不变，而势垒高度下降较大； - Research of Barrier Height and Width in ZnO Varistor Ceramics
ZnO压敏陶瓷晶界势垒高度和宽度的研究 - The barrier height is calculated in this paper, and the mechanism of impurity gettering and stress compensation are used to explain the experimental results.
本文还对势垒高度进行了计算，并利用吸除及应力补偿的机理对结果进行了分析。 - The barrier height for a home made InP in contact with some metals are given.
测量了国产InP单晶与一些金属的接触势垒； - On the near surface monocrystalline GaAs layer, a better Schottky contact with a barrier height of 0.7V has also been fabricated.
在近表面单晶层上作成了性能良好的肖特基接触，其势垒高度约为0.7V。 - It is possible to modify the barrier height of Schottky devices by using LB thin films as insulators.
以LB薄膜作为绝缘层可调整肖特基器件势垒高度。 - It is concluded that the donor concentration remains nearly the same while barrier height, density of states at the interface and depletion width increase when the concentration of doped Na+ increases.
实验结果表明：Na+掺杂量增加时，施主浓度基本保持不变，而势垒高度、界面态密度和耗尽层宽度增加； - The barrier height increase can be explained with the generalized model slightly modified.
最后，采用稍加修正的肖特基势垒模型解释了势垒高度的增加。结果表明，氧化层中的固定电荷对势垒高度的影响是极其重要的。 - This mainly attributed to grain size, homogeneity and barrier height of ZnO ceramics.
这主要与晶粒的大小、均匀度以及晶界势垒的高度有关。 - The calculation shows that the resistivity ( ρ) increases with increasing the barrier height.
数值计算表明多晶硅电阻率随势垒高度的增加而呈线性地增加。 - The relationship between the detect parameters of PtSi/ Si infrared detector and the properties of the films was derived. The dependence of detecting capability on the thickness of thin film and barrier height was simulated by the Monte Carlo method.
分析PtSi／Si结构测参数与膜特性的关系，用MonteCarlo方法计算了薄膜厚度、势垒高度同探测能力的关系，得到提高探测器探测能力的有效途径。 - A heavily doped layer is induced near the surface of p-InP by Zn diffusion after annealing, which can reduce the barrier height and width of the contact and do good to the formation of ohmic contact.
退火后，Zn的扩散可以在p-InP表面形成重掺杂层，从而降低接触势垒高度，减小势垒宽度，有助于欧姆接触的形成； - Influence of Si-Substrate Thickness and Barrier Height of Back Contact upon the Characteristics of MOS Capacitor
硅衬底厚度和背接触势垒高度对MOS电容器性能的影响 - The elevation of the schottky barrier height after annealing causes the reduction of gate leakage and the more depletion of channel electrons, which also leads to the change of the saturation current and the threshold voltage.
退火后肖特基势垒高度提高，在减小栅泄漏电流的同时对沟道电子也有耗尽作用，这是饱和电流和阈值电压变化的主要原因。 - It is found that under various vacuity there can be distinct difference of the parameters of surface energy level Es ( Or surface barrier height? Bp) and surface state density in per unit energy etc. and the photovoltaic values at room temperature region.
发现在不同真空度下，其表面能级ES（或表面势垒高度ψBP）和单位能量间隔的表面态密度DS等参数以及常温温区下的光伏值可有明显的差异。 - The resulting persistent atom current can be controlled by adjusting of the barrier height of the periodic potential.
相应的持续原子流可通过调节光格子势垒高度来控制。 - The traditional method is mainly focused on reducing barrier height between the cathode electrode and the organic layer to improve the electron injection efficiency, but this is a passive measure.
传统的阴极修饰法是侧重降低电极和有机层之间的势垒来提高电子的注入效率，是一种被动措施。 - Both the experimental and self-consistent calculating results indicate that the barrier height decreases with the increasing bias, and finally disappears at larger bias.
实验结果和理论的自洽计算结果都表明随着偏压的增大，势垒高度将逐渐减小，直至大的偏压下势垒高度的消失。 - The most favored reaction channel is chromium carbene with a barrier height only 9.63 kcal mol-1.
最有利的反应通道是铬卡宾亚甲基反应通道，需要克服能垒9.63Kcalmol-1。 - The effective barrier height increases with decreasing the degree of Fermi level pinning.
其有效势垒高度随着表面费米能级钉扎程度的降低而升高。